| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3abd6b77438f6c98f8e92a31fc7ce005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53f651b07929b134486022c429a36657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c4952f2290b86ffb7601ff39dbe88a5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2007-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff31fcd0f6662367d5d6302ef2790837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f63fe0ebfeee9e496789ba9f270585e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b20922d85d67eb264f4eb5e5632b94b |
| publicationDate |
2008-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008047905-A1 |
| titleOfInvention |
Method of forming resist pattern and negative resist composition |
| abstract |
A novel method of resist pattern formation which is reduced in resist pattern loss; and a negative resist composition for use in the method of resist pattern formation. The method of resist pattern formation comprises: a step in which a first resist composition is applied to a substrate to form a first resist film; a step in which the first resist film is selectively exposed through a first mask pattern and developed to form a first resist pattern; a step in which a negative resist composition containing an etheric organic solvent (S') having no hydroxy group is applied to the substrate bearing the first resist pattern to thereby form a second resist film; and a step in which the second resist film is selectively exposed through a second mask pattern and developed to form a resist pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010286831-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014137435-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009003160-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010085829-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859187-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011090164-A |
| priorityDate |
2006-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |