| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_411eed482e76ca99b40cad48db98c530
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d30f53b9da0870bb14d619b90f4e22e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3f82426ad18dc2493715fe04f0e607e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e70c80ad88073898f27991ab90738107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d7ee840c02100065781380189541a14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac2fbf27b458fb5064ffdd4e73496dd8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate |
2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b4a786fab775dea343bb1579d16bf89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64c59fad9f508a0d68ca0902e45bfa1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56ba898a74961a32c82603ee7bfa6a2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3de921491680af7bbb5d0c9290296dad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58e2248e0a9f9e3407784bd1e5a82d51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c68c3be260a99354b8559082e98d4644 |
| publicationDate |
2008-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008047637-A1 |
| titleOfInvention |
Process for producing nitride semiconductor, crystal growth rate enhancement agent, nitride single crystal, wafer and device |
| abstract |
This invention provides a process for producing a nitride semiconductor, comprising the step of regulating the temperature and pressure within an autoclave containing a seed having a crystal structure of a hexagonal system, a nitrogen element-containing solvent, a starting material comprising a metallic element belonging to group 13 of the periodic table, and a mineralizer so that the solvent is brought to a supercritical state and/or a subcritical state to allow a nitride semiconductor crystal to grow ammonothermally on the surface of the seed, wherein the crystal growth rate in m-axis direction on the seed is brought to not less than 1.5 times the crystal growth rate in c-axis direction on the seed. The above constitution can realize the production of nitride semiconductors with a large-diameter c face and nitride semiconductors having a large thickness in m-axis direction in an efficient and simple manner. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011523931-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011521878-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101668385-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110021961-A |
| priorityDate |
2006-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |