| abstract |
A template type substrate used in optoelectronics or electronic equipment includes a nitride layer formed by vapor phase epitaxial growth, and both main surfaces of the nitride substrate are substantially composed of a non-N polar surface and an N polar surface, respectively. The defect density of the substrate is 5 × 10 5 / cm 2 or less. Therefore, the template-type substrate has a good defect density, and the half-value width of the X-ray rocking curve from the (0002) plane is a good value of 80 or less. The formed template-type substrates are MOCVD, MBE and HVPE. It is very useful for an epitaxy substrate formed from a gas phase, and a good optoelectronic device such as a laser diode and a high power LED and a good electronic device such as a MOSFET can be manufactured. |