| abstract |
In a semiconductor device, a trench is arranged on an insulating layer on a substrate, and a gate electrode is formed in the trench so that the surface of the gate electrode is substantially flat with the surface of the insulating layer. On the gate electrode, a semiconductor layer is arranged through a gate insulating film, and at least a source electrode or a drain electrode is electrically connected to the semiconductor layer. Especially the gate insulating layer includes an insulating coat film arranged on the gate electrode and an insulating CVD film formed on the insulating coat film. |