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filingDate 2007-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81d24bb6449eb102d35a364fc5fb001f
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publicationDate 2008-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2008029622-A1
titleOfInvention Thin film forming apparatus and thin film forming method
abstract Provided are a thin film forming apparatus and a thin film forming method wherein an atmospheric pressure plasma discharge is employed and floating fine particles are not mixed while a film is being formed of a base material by adjusting a gas flow resistance and supply and exhaust flow quantities. The flow resistance that a treatment gas receives at a time of passing through a coating space section between a treatment gas ejecting means and surfaces of a pair of roll electrodes is larger than a flow resistance that the treatment gas receives at a time of passing through a gap between the pair of roll electrodes. A gas exhaust flow quantity at the treatment gas ejecting means and that at the exhaust gas ejecting means are larger than a gas supply flow quantity at the treatment gas ejecting means.
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priorityDate 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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