| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e071d18fea054bf8d1420d483e78ed1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54f4ce98d333cf6428b53e6707232c33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e1bdcff6e3d45535dbbff20242c369fa |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 |
| filingDate |
2007-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dbbfd499f6fa38112f700ce37d4eac7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_355ecde279a3046410cb4fa5ecb18290 |
| publicationDate |
2008-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008008319-A2 |
| titleOfInvention |
Selective sealing of porous dielectric materials |
| abstract |
This invention relates to materials and processes for selective deposition of silica films on non-metallic areas of substrates while avoiding any significant deposition on metallic conductive areas. Silica sealed the surface pores of a porous dielectric by the reaction of an aluminum-containing compound with an alkoxysilanol. Metal layers are protected from this deposition of silica by adsorption of a partially fluorinated alkanethiol. This invention provides processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. At the same time, a clean metal surface is produced, so that low electrical resistances of connections between copper layers are maintained. The combination of low-k dielectric constant and low resistance allows construction of microelectronic devices operating at high speeds. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2444406-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2444404-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2444405-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8802194-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9240319-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8454928-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8101237-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2444407-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110048025-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8636845-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9109281-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8236381-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9206507-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8691668-B2 |
| priorityDate |
2006-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |