| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c3ad592b7cdca08b1a22035c7f4dc53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3ab885aa37f746feff8b1148673d7aba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7017060984ed5c617e0769923c955926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e77a216b250c9bbf60cb255eeed95014 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 |
| filingDate |
2007-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9c970fe5b1f132fab3e1d5e339c7394
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed991008b7d33196a86caad575bcc502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf9111945c7753c09dbbc816439c084b |
| publicationDate |
2008-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008008098-A2 |
| titleOfInvention |
Plasma deposition apparatus and method for making polycrystalline silicon |
| abstract |
Λ plasma deposition apparatus (100) for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber- having an exhaust system for recovering un-deposited gases; a support (103) located within the deposition chamber for holding a target substrate (104) having a deposition surface (106), the deposition surface defining a deposition zone (105); at least one induction coupled plasma torch (107) located within the deposition chamber and spaced apart from the support (103), the at least one induction coupled plasma torch (102) producing a plasma flame that is substantially perpendicular to the deposition surface (106), the plasma flame defining a reaction zone (126) for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface (106). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015076441-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10070964-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9802826-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016362302-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010115902-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2239353-A1 |
| priorityDate |
2006-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |