| abstract |
A barrier film of a semiconductor device is formed. Specifically, an intermediate layer (25) mainly composed of copper, while containing a predetermined amount of a diffusible metal and being added with a reaction gas is formed by sputtering an alloy target mainly composed of copper and added with the diffusible metal, while supplying a reaction gas containing oxygen or nitrogen. Since the diffusible metal content is accurately controlled, a barrier film can be surely formed by heating the intermediate layer (25). In addition, reactivity of the diffusible metal is increased by adding the reaction gas into the intermediate layer (25), and thus the barrier film can be formed at a temperature lower than the conventional heating temperatures. |