| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76858
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2009-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2011-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011525697-A |
| titleOfInvention |
Self-aligned barrier layer for wiring |
| abstract |
Provided are a wiring structure for an integrated circuit incorporating a manganese silicate layer and a silicon nitride manganese layer completely surrounding a copper wire in the integrated circuit, and a method for manufacturing the same. Manganese silicate forms a barrier to prevent copper from diffusing from the wiring, thereby protecting the insulator from prematurely damaging the transistor and protecting the transistor from degradation by copper. In addition, manganese silicate and silicon nitride manganese promote strong adhesion between copper and insulator, thus preserving the mechanical integrity of the device during manufacture and use. Also, strong adhesion at the copper-manganese silicate interface and the silicon-manganese nitride interface protects against copper electromigration damage during device use. The manganese-containing sheath also protects the copper from corrosion by surrounding oxygen or water. [Selection] Figure 7 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020176104-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7161767-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017135237-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017508290-A |
| priorityDate |
2008-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |