http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008002415-A3

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filingDate 2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c02fd03446c008e213fb8fc873f95dab
publicationDate 2008-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2008002415-A3
titleOfInvention Precursors for depositing silicon containing films and processes thereof
abstract This invention relates to organometallic compounds represented by the formula HaM(NR1 R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y. is a value from 0 to 4, z is a value from 0 to 4, and a + x + y + z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.
priorityDate 2006-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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