| abstract |
Disclosed is a method for forming a metal compound layer, which comprises a step for preparing, in a chamber, a substrate wherein a semiconductor material composed of silicon, germanium or silicon-germanium is exposed in the surface; and a metal compound layer forming step wherein a raw material gas containing a metal which is capable of forming a metal compound with the semiconductor material is supplied into the chamber and the substrate is heated to a temperature at which the raw material gas is thermally decomposed, thereby reacting the metal with the semiconductor material and forming a metal compound layer under such conditions that the metal does not deposit on the substrate. Also disclosed is a method for manufacturing a semiconductor device, which utilizes this method for forming a metal compound layer. |