http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08139030-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 |
| filingDate | 1994-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10a078dcbe03abb0d4546bfd206679bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4661b60f297457e276c884543db15a4 |
| publicationDate | 1996-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08139030-A |
| titleOfInvention | Method for forming copper thin film for wiring and method for manufacturing semiconductor device using the same |
| abstract | (57) [Abstract] [Purpose] In forming a copper thin film for wiring by the CVD method, It is possible to form a copper thin film having small unevenness, smoothness, excellent electrical characteristics, and good film quality at a high deposition rate, and improve the consumption efficiency of raw material. By applying this to the formation of multi-layer wiring of a semiconductor integrated circuit, a method for manufacturing a high-performance and highly reliable semiconductor device with high productivity is provided, and the technical and economical improvement of a production line such as an LSI is attempted. . [Structure] In the initial stage of formation of a copper thin film, chemical vapor deposition is performed using a mixed gas of copper hexafluoroacetylacetonate and hexafluoroacetylacetone as a source gas or a mixed gas of hydrogen gas, The first step of increasing the nucleation density to form a smooth and smooth copper thin film with small irregularities, and then switching the source gas to a mixed gas of copper hexafluoroacetylacetonate and hydrogen for high deposition The second step of performing chemical vapor deposition of a copper thin film at a high speed, Use at least. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002194545-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7968463-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010095498-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5280843-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008244298-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008117582-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4717202-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007139041-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001077051-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006101130-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6726954-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100673664-B1 |
| priorityDate | 1994-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.