| abstract |
A method for manufacturing a group 3-5 nitride semiconductor substrate is provided. The method includes steps (I-1) to (I-6). In the step (I-1), inorganic particles are arranged on a base substrate. In the step (I-2), the base substrate is dry-etched by using the inorganic particles as an etching mask, and protruding sections are formed on the base substrate. In the step (I-3), a film for an epitaxial growing mask is formed on the base substrate. In the step (I-4), the inorganic particles are removed and an exposed surface of the base substrate is formed. In the step (I-5), a group 3-5 nitride semiconductor is grown on the exposure surface of the base substrate. In the step (I-6), the group 3-5 nitride semiconductor is separated from the base substrate. Furthermore, the method includes steps (II-1) to (II-7). In the step (II-1), inorganic particles are arranged on a base substrate. In the step (II-2), the base substrate is dry-etched by using the inorganic particles as an etching mask, and protruding sections are formed on the base substrate. In the step (II-3), the inorganic particles are removed. In the step (II-4), the film for an epitaxial growing mask is formed on the base substrate. In the step (II-5), a film on the tops of the protruding sections is removed, and an exposed surface of the base substrate is formed. In the step (II-6), a group 3-5 nitride semiconductor is formed on the exposed surface of the base substrate. In the step (II-7), the group 3-5 nitride semiconductor is separated from the base substrate. |