| abstract |
(57) [Summary] [Problem] Without generating cracks and the like, A nitride semi-substrate with a low defect density and excellent productivity can be reliably obtained. A mask film made of a material on which a nitride semiconductor does not substantially grow and having a plurality of openings in a stripe shape is formed on a main surface of a base material substrate. Form B. Next, the mask film 12 is formed on the base material substrate 11. The semiconductor layer 13 made of nitride is selectively grown via B. Next, the interface between the semiconductor layer 13 and the base material substrate 11 is irradiated with a laser beam, so that the semiconductor layer 13 is By separating from the semiconductor layer 13, a nitride semiconductor substrate 13A is formed from the semiconductor layer 13. |