| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_676a0078f958e4c08b6dfe1a4fd8391b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_580c55dbd0790b280ada00f9496fe7b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af719e1f43aef800e92c80f9ed86713b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b423abdd5ffa9a6d2386b3b54185d4d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b840490ce4e7830aa852a942094b9df0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-2698
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-02881 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-2437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-343 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-00 |
| filingDate |
2007-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b49e2a21f69f7169a9a5d61e97e14f68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30e5939fe4c2cd0209b1ee0a4955066c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ece99d5a11e72df614b11df22d4a168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_933c7b182eb2206f3d3029c4ac67367a |
| publicationDate |
2007-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007100155-A1 |
| titleOfInvention |
Quantitative evaluation device and method of atom vacancy existing in silicon wafer |
| abstract |
A quantitative evaluation device of atom vacancy existing in a wafer in which the atom vacancy concentration in a silicon wafer can be evaluated quantitatively without performing acceleration processing, for example, raising the concentration by forming a thin film oscillator subjected to rationalization on the surface of a silicon sample. The quantitative evaluation device of atom vacancy comprises a magnetic force generating means (2) for applying an external magnetic field to a silicon sample (5) obtained by cutting out a predetermined part from a silicon wafer, a temperature control means (3) which can cool/control the silicon sample (5) to a temperature zone of 50K or below, and a means (4) for oscillating an ultrasonic pulse on the surface of the silicon sample (5) to allow the pulse to propagate through the silicon sample (5) and detecting a variation in sound velocity of the propagating ultrasonic pulse. The quantitative evaluation device is characterized in that a thin film oscillator (8) having physical properties capable of following up expansion of the silicon sample (5) in the above-mentioned temperature zone and having C-axis arranged in a predetermined direction is formed directly on the surface of the silicon sample (5). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011027670-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009033102-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8578777-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5425914-B2 |
| priorityDate |
2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |