http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8578777-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af719e1f43aef800e92c80f9ed86713b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_580c55dbd0790b280ada00f9496fe7b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b423abdd5ffa9a6d2386b3b54185d4d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2661c532eb74e7a09df9f82198a6811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b379b591ce911ae4d2df244202cbf819 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-07 |
| filingDate | 2010-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c64edde74a4f6d097b26f85b8bc7939f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4c006b38950f568e9cdef547d856c3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e83f2f223688fdf4d0485f5b742979aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb1c365fff2b30819700292b8b3c1c94 |
| publicationDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8578777-B2 |
| titleOfInvention | Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon wafer |
| abstract | A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer ( 26 ) while keeping the silicon wafer ( 26 ) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer ( 26 ) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer ( 26 ). |
| priorityDate | 2009-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.