| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_61c7b561aaf4b39a3b46075676a9b029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a96ae1170c315dec50d1337af11c4ad5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_07b0f31a6c8fd91c43865784e26e5f82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb11aef8b188e6381d2e705bc60c8ad8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e9f24b25687a7955f0175d59046ccb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2006-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28e0c748e340fea6363872220bcc6f07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_905328fdd155d9f3edc90c1c8d0628a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f2e7690aeb39889749cd371b660ba39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f30f0e14eed2b0ac33156a43fe1184fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b026cd1df93d61dba484070a0aceb53d |
| publicationDate |
2007-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007058715-A2 |
| titleOfInvention |
Method of fabricating a silicon nitride stack |
| abstract |
Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer comprising silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer comprising silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer. |
| priorityDate |
2005-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |