| abstract |
A method and system (3, 400, 1300) for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate (25, 458, 1322) in a process chamber (10, 450, 1320), generating a plasma from a process gas (42) containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate (25, 458, 1322) to the plasma to form a nitrided germanium-containing layer on the substrate (25, 458, 1322). A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer. |