abstract |
Disclosed is a constitutional member (10) used for semiconductor processing apparatuses which comprises a base (10a) defining the shape of the constitutional member, and a protective film (10c) covering a predetermined part of the base surface. The protective film (10c) is composed of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium and yttrium, and has a porosity of less than 1% and a thickness of from 1 nm to 10 μm. |