| abstract |
A groove for forming wiring is formed in a prescribed region in an insulating film formed above a semiconductor substrate, and a barrier metal film is formed on the surface of the groove. After forming a copper or copper alloy film on the barrier metal film, an oxygen absorbing film, which has negative standard formation energy of oxidizing reaction in a range from a room temperature to 400°C and has an absolute value of the standard formation energy larger than that of the barrier metal film, is formed on the copper or copper alloy film, and the oxygen absorbing film is heated at a temperature in a range of 200-400°C. Thus, adhesion between the barrier metal film and a copper interface is improved, generation of electromigration and stress migration is prevented by suppressing copper diffusion on the interface, and a semiconductor device having highly reliable wiring is provided. |