| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2014-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_587b8508fe4fbc595bf0611967248335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff4e50af423903c50d65881f88f11ba5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40d91b09892d2db773d8f62f750ac5b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83f09faa3aada0893da057906275fb9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f26a363caec87bbc18c617bdce4fafc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b698e6a950341028121c70591c3c323b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2646b4832ba48beaa80f2e6b4ed9cdc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_350fb36209c60b4b041460bf4a61b825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24c353f1f83731a683273081dc5dea9f |
| publicationDate |
2016-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9362184-B2 |
| titleOfInvention |
Semiconductor device, manufacturing method of semiconductor device, semiconductor manufacturing and inspecting apparatus, and inspecting apparatus |
| abstract |
A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher. |
| priorityDate |
2008-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |