http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006120739-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99b028bff9124c76e9a0a162d603076d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_26d6939a584f8e3c88769ed3ea851e1e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 |
| filingDate | 2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_772b9a4f38c7aef9bc949d92452dc21d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32a2db79ebe22d83391cd98bc2a0e5a0 |
| publicationDate | 2006-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2006120739-A1 |
| titleOfInvention | Semiconductor device and production method therefor |
| abstract | [PROBLEMS] A semiconductor device capable of reducing a leak current to below conventional ones and a production method therefor. [MEANS OF SOLVING PROBLEMS] A semiconductor device characterized by comprising a silicon substrate (20), an element isolation insulating film (21) for dividing the active region Cn of the silicon substrate (20) into a plurality of segments, a gate electrode (28a) formed on the active region Cn, a source/drain region (36) formed on the active regions Cn on the opposite sides of the gate electrode (28a) and constituting the MOS transistor of an SRAM memory cell along with the gate electrode (28a), an inter-layer insulating film (42) formed respectively on the active region Cn and the element isolation insulating film (21), a first hole (42a) formed in the inter-layer insulating film (42) and commonly overlapping on adjacent two active regions Cn and an element isolation insulating film (21) between the adjacent two active regions Cn, and a first conductive plug (47a) formed in the first hole (42a) to connect electrically the two active regions Cn. |
| priorityDate | 2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.