http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006103858-A1

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filingDate 2006-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af85d37890ea180a23f6b214616f1731
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publicationDate 2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2006103858-A1
titleOfInvention Abrasive for semiconductor integrated circuit device, method of polishing therewith and process for producing semiconductor integrated circuit device
abstract In connection with the production of a semiconductor integrated circuit device, it is intended to provide a technology in which the dependence on pattern of polishing speed in the event of polishing a target surface of silicon dioxide material layer is reduced, in which while suppressing the polishing of depressed portions, protrudent portions can preferentially be polished, and in which high planarization of the polishing surface can be achieved with an extremely reduced polished amount. There is provided a process for producing a semiconductor integrated circuit device, comprising using an abrasive containing cerium oxide particles, a water soluble polyamine and water as an abrasive for chemical mechanical polishing for polishing of a target surface in the event that the target surface is a polishing surface of silicon dioxide material layer.
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priorityDate 2005-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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