| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7317808024e524eea40a6c5a5ad6a22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58742116ccf5669127c3149393e0b6bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_814c633e135528fb1d797891a232730c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 |
| filingDate |
2005-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b42a87f408a1cc95699993fb4775a775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b364d294f693ac1aaca5d93209873958 |
| publicationDate |
2006-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2006070297-A2 |
| titleOfInvention |
Enhancement - depletion semiconductor structure and method for making it |
| abstract |
A ED-HEMT structure includes a buffer layer (4) including a doped layer (18), a channel layer (6), a barrier layer (8), and a second doped layer (20). An enhancement mode HEMT gate (12) is formed in a via extending through the second doped layer (20) and a depletion mode HEMT structure is formed over the second doped layer (20). The layer sequence allows the formation of both enhancement and depletion mode HEMTs in the same structure with good properties. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964896-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9083334-B2 |
| priorityDate |
2004-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |