| abstract |
A semiconductor structure is provided that includes a Vt stabilization layer between a gate dielectric and a gate electrode. The Vt stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the provision that when the Vt stabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure. |