Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
filingDate |
2014-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5083511aeef16853618b44808fd70f4 |
publicationDate |
2016-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016211333-A1 |
titleOfInvention |
Silicon carbide semiconductor device and method of manufacturing the same |
abstract |
A SiC semiconductor device includes a SiC substrate, a gate insulating film formed on a surface of the SiC substrate and made of SiO 2 , and a gate electrode formed on the gate insulating film. A maximum value of a nitrogen concentration in a region within 10 nm from an interface between the SiC substrate and the gate insulating film is greater than or equal to 3×10 19 cm −3 . A maximum value of a nitrogen concentration in a region within 10 nm from an interface between the gate insulating film and the gate electrode is less than or equal to 1×10 20 cm −3 . |
priorityDate |
2013-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |