http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005109475-A3

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filingDate 2005-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eca6cdfc3d561b62c7f3b5858e690b97
publicationDate 2006-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2005109475-A3
titleOfInvention Zeolite films for low k applications
abstract A method is provided for making an integrated circuit dielectric. A structure-directing agent (SDA) is provided. Preferably this structure-directing agent is a salt of a polycyclic organic compound. By use of the structure-directing agent, a film of a zeolite having a framework density below 15 T atoms per 1000 cubic angstroms and comprising primarily silicon and/or germanium atoms in the T positions is provided on a semiconductor substrate. Preferably the zeolite has the LTA structure. The structure-directing agent is removed from the film. The removal may be effected, for example, by heating or by chemically and/or photochemically decomposing the structure-directing agent, preferably in a manner which allows it to be recovered. The film is then optionally modified to reduce its hydrophilicity.
priorityDate 2004-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.