| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_17e685c610eac8a8981265b51390af03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9ef8cb4529ab0a0489b59a3acfc1c61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9811a5edd5b5e1533c71bd4e64c4a067
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9c2e1af948ed88b1d501e78d99fe780
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53e5dfd005ef21a33c9eede97161b014 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F-
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2004-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e8a24d3dd038687255b540f320dada9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd3747f26a1b00ce2cf70f90ca1056e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04589a649b52c2ab83a1c1289d7f9c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb02c12d1319eaf5ce0f8fd7307cdda3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f7f1714fd1c91f868d6d10cd3b173d7 |
| publicationDate |
2005-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2005040918-A3 |
| titleOfInvention |
Low-activation energy silicon-containing resist system |
| abstract |
Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193nm and 157nm. |
| priorityDate |
2003-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |