| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_50d60451f2dd2662f2f4acbab62da1af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d87cf3600016991be7ff3e7d95dfe344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_203f9e4e7f928d62d49eaa3aad372c4b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2004-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3287203d5fb71c2765d411f4d22f77a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7285c1531b88b9ee0c33182a0809d08d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b17148c8175118c372297a49a9690ec0 |
| publicationDate |
2006-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2005022622-A9 |
| titleOfInvention |
Dry etching process and method for manufacturing magnetic memory device |
| abstract |
Disclosed is an etching process which is particularly preferable for etching PtMn used in a pinned layer of an MRAM. The dry etching process is characterized in that a layer containing platinum and/or manganese is dry etched using a pulse plasma. Also disclosed is a method for manufacturing an MRAM wherein such a dry etching process is applied for processing a pinned layer. The MRAM comprises a memory unit including a magnetic memory device which is composed of a tunnel magnetoresistive element. The tunnel magnetoresistive element is composed of a fixed magnetization layer wherein the magnetization direction is fixed, a tunnel barrier layer and a magnetic layer wherein the magnetization direction is changeable, which layers are stacked on top of one another. |
| priorityDate |
2003-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |