Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1172431479a0c2ed8cc6507e5fcf3af2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a06b069d88a7ee7bdae802534245b4a4 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-515 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
filingDate |
2004-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dc3e501d9d672ad9c090ccce3ee04de http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73c5fa260f0e1f29de9d458dc59b13fe |
publicationDate |
2004-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2004079814-A2 |
titleOfInvention |
Modulated/composited cvd low-k films with improved mechanical and electrical properties for nanoelectronic devices |
abstract |
A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7919188-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8034890-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7875315-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7883742-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7790234-B2 |
priorityDate |
2003-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |