| abstract |
A silicon oxide layer is produced by plasma enhanced oxidation of an organosiliconncompound to deposit films having a carbon content of at least 1% by atomic weight. Filmsnhaving low moisture content and resistance to cracking are deposited-by introducing oxygenninto the processing chamber at a flow rate of less than or equal to the flow rate of thenorganosilicon compounds, and generating a plasma at a power density ranging between 0.9nW/cm 2 and about 3.2 W/cm 2 . An optional carrier gas may be introduced to facilitate thendeposition process at a flow rate less than or equal to the flow rate of the organosiliconncompounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to eachnsilicon atom, such as trimethylsilane, (CH 3 ) 3 SiH. An oxygen rich surface may be formednadjacent the silicon oxide layer by temporarily increasing oxidation of the organosiliconncompound. |