| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68 |
| filingDate |
2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e64b3d85723f138e6fd859fdbeaca4ad |
| publicationDate |
2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004053981-A1 |
| titleOfInvention |
Method of cutting semiconductor wafer and protective sheet used in the cutting method |
| abstract |
In a method of cutting a semiconductor wafer in which the semiconductor wafer (6) is cut by plasma etching, a protective sheet (30) on which a metallic layer (30b), the plasma etching rate of which is low, is formed on one face of an insulating sheet (30a) is stuck on to a circuit forming face 6a by an adhesive layer (3oc), and plasma is exposed to an opposite side to the circuit forming face (6a) from a mask side which is formed by covering regions except for cutting lines (31b) with a resist film (31a) so as to conduct plasma etching on portions of the cutting lines. Due to the above structure, it is possible to use the metallic layer as an etching stop layer for suppressing the progress of etching. Therefore, fluctuation of the progress of etching can be avoided and heat damage caused on the protective sheet can be prevented. |
| priorityDate |
2002-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |