| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cdc462292f7c8173c366b529d2606832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee943deaeedd2bb54599efcbd67f18fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f09d9bcc8d0960dfac592317ae4e2fde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea322c04b7411ea157233b10f2c0673 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cce4c00ef870b6ebdcfae46bd699995
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_207aed6905cf510fa6ea2bc57e48ee4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e137d541bd1bf96aa2e8160d32aab8d |
| publicationDate |
2004-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004017390-A1 |
| titleOfInvention |
Method and compositions for hardening photoresist in etching processes |
| abstract |
A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine. |
| priorityDate |
2002-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |