| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a2ee38239afdedca30e0e52b492dc09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00d392533c374c9dfb7220d2925de24f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4abf66ba1b4668a2d2042aa07f4005cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b51e7250f8298f6c33311a87562cb19e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2003-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e440df156efd680e2d925f4ba2cd8c0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_948c0a60cc37f437a4f9d7af35645d4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_107374de812bdb06c261ab2e1dc64292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b8f029315280b9c1763eab342c01d76 |
| publicationDate |
2003-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03100817-A1 |
| titleOfInvention |
Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode |
| abstract |
An improved upper electrode system has a multi-part electrode in which a central portion (110) of the electrode having high wear is replaceable independent of an outer peripheral portion (114) of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processsing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3171393-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2301308-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2301308-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8418649-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010005540-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8701268-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1989727-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1989727-A4 |
| priorityDate |
2002-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |