| abstract |
An inverse-staggered MOSFET (1) in which a gate insulating layer (4) for a channel layer (5) which is made of zinc oxide and is a semiconductor layer is formed of amorphous aluminum oxide. With this structure, the defect level at the interface between the channel layer (5) and the gate insulating layer (4) is reduced, and thus performance equivalent to those of semiconductor devices in which all the multilayer films are crystalline multilayer films is realized. Such a technique can be applied to a staggered MOSFET and the versatility is high. |