| abstract |
A novel field effect transistor using amorphous oxide is provided. In an embodiment of the present invention, the transistor includes an amorphous oxide layer containing an electron carrier at a concentration of less than 1 × 10 −18 / cm 3 , and the gate insulating layer includes a first layer in contact with the amorphous oxide. And a second layer different from the first layer. n n Amorphous oxide, electron carrier, field effect transistor, thin film transistor |