| abstract |
A composition for forming an anti-reflection coating usable in a lithography process for manufacturing a semiconductor device, which comprises a polymer compound containing a halogen atom; a method for adjusting the damping coefficient of the anti-reflection coating which comprises changing the content of the halogen atom in the polymer compound; and an anti-reflection coating prepared from the composition. The polymer compound preferably has a halogen atom introduced into the main chain thereof and/or a side chain connected with the main chain. The anti-reflection coating can be used in a lithography process using an irradiation light of F2-excimer laser (wave length: 157 nm), exhibits high effect of preventing the reflection of the light, and does not cause the intermixing with a resist layer. |