http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2008105266-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0277 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2008-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2008105266-A1 |
| titleOfInvention | Composition for forming resist underlayer film for electron beam lithography |
| abstract | 【Task】 Resist underlayer film composition for electron beam lithography, which is used in a device manufacturing process using electron beam lithography and is effective in reducing adverse effects exerted by electron beams and obtaining a good resist pattern, and the resist for electron beam lithography A resist pattern forming method using an underlayer film composition is provided. A resist underlayer film forming composition for electron beam lithography comprising a polymer compound having a repeating unit structure containing a halogen atom and a solvent, between the film to be processed for forming a transfer pattern on the substrate and the resist film for electron beam lithography The film is used for manufacturing semiconductor devices. The polymer compound contains at least 10% by mass of a halogen atom. [Selection figure] None |
| priorityDate | 2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 194.