| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1bc675361d96879c69bc00e939144c2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bd6f717ec2abab6b6d04edae0344f41a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6946eaaed84e82eb97a3afca46c9cf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_16b0f46881513d46f752c3d20417a94b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_edc7ad06ab91150c5556ccaa5b0a5185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7fdfe84e52dd473e7738f6774b3d1494 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1031 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L-
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b262db88f6952c8138ef8ef16d6336a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fecae303acfa3cf4718bd6e82d4208f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89bd7c3dba2d783d59fbf5a315b092c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d5832065ffb4928bd8a73e0345ffcfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9973d76790a1d74726c52444ea2a6b30 |
| publicationDate |
2004-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03063205-A3 |
| titleOfInvention |
Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications |
| abstract |
An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 30.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electricaly insulating material is deposited on the substrate followed by heating at a temperature of 350 °C or less; and whrein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material. A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid by crosslinking via the fully or partially fluorinated orgnanic group. |
| priorityDate |
2002-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |