| abstract |
Disclosed herein is a surface protective sheet for semiconductor wafer, used in wafer back grinding during a process comprising providing a wafer of predetermined thickness having a surface furnished with circuits and a back, forming grooves of a cut depth smaller than the thickness of the wafer from the wafer surface and grinding the back of the wafer so that the thickness of the wafer is reduced and so that the wafer is finally divided into individual semiconductor chips, which surface protective sheet comprises a base material and, superimposed thereon, a pressure sensitive adhesive layer, the base material comprising two or more constituent layers which include a first constituent layer of 10 to 300 µm thickness exhibiting a Young's modulus of 3000 to 30,000 N/m2, and a second constituent layer exhibiting a glass transition temperature, measured by DSC, of 70° C or below, the second constituent layer being an outermost layer. |