http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03034469-A2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23e5bd41354903a58a77cb8a4c59b622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcff13f8573db698307f919e6385d5c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea6a72ecef8621b2b74c434adb5863de
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-977
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-974
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00626
classificationIPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate 2002-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41b7c2820f54cf3f7d66d9734a0ed2c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51915a4cd1b6eb9b02eadfd3c20c4342
publicationDate 2003-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-03034469-A2
titleOfInvention Method of fabricating a device having a desired non-planar surface or profile and device produced thereby
abstract A method of fabricating a device having a desired non-planar surface or profile and device produced thereby are provided. A silicon wafer is first coated with silicon nitride, patterned, and DRIE to obtain the desired etch profile. Silicon pillars between trenches are then etched using an isotropic wet etch, resulting in a curved well. The wafer is then oxidized to ∩2 µm to smooth the surface of the well, and to protect the well from an ensuring planarization process. The nitride is then selectively removed, and the wafer surface is planarized by removing the Si left in the field regions using either a maskless DRIE or CMP. Finally, the oxide is etched away to produce a wafer with a curved surface.
priorityDate 2001-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15913
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449266279
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099

Total number of triples: 36.