Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23e5bd41354903a58a77cb8a4c59b622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcff13f8573db698307f919e6385d5c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea6a72ecef8621b2b74c434adb5863de |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0104 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-977 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-974 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00626 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
filingDate |
2002-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41b7c2820f54cf3f7d66d9734a0ed2c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51915a4cd1b6eb9b02eadfd3c20c4342 |
publicationDate |
2003-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-03034469-A2 |
titleOfInvention |
Method of fabricating a device having a desired non-planar surface or profile and device produced thereby |
abstract |
A method of fabricating a device having a desired non-planar surface or profile and device produced thereby are provided. A silicon wafer is first coated with silicon nitride, patterned, and DRIE to obtain the desired etch profile. Silicon pillars between trenches are then etched using an isotropic wet etch, resulting in a curved well. The wafer is then oxidized to ∩2 µm to smooth the surface of the well, and to protect the well from an ensuring planarization process. The nitride is then selectively removed, and the wafer surface is planarized by removing the Si left in the field regions using either a maskless DRIE or CMP. Finally, the oxide is etched away to produce a wafer with a curved surface. |
priorityDate |
2001-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |