| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c5549186ca7b63bfe7a558707a2d33e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dcdce895d46d4325b7b100e459c6426e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b62c7c48263226e7b493ac8356543466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9bceffddb90b9b3da8a772212961764b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c51bbcf277d71494212e63c2d387a2d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64940258408b8c22d76b2c9f59380fe7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-905 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2002-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_471d3ad534d9c07cc63bf9c010066e7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_340f13e652810ca68d83f4e59f5c1760
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_569d58c797e9562ea5e47fe1de36908a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2718fb15890c31e6e2c0f97e1d8590a7 |
| publicationDate |
2003-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03021653-A1 |
| titleOfInvention |
Plasma cleaning gas and plasma cleaning method |
| abstract |
A CVD chamber-use plasma cleaning gas which is used to clean silicon-containing deposits accumulated on the inner-wall surface of a CVD chamber and on the surfaces of members disposed in the CVD chamber after a film is formed on a substrate by a plasma CVD device, characterized in that the cleaning gas is a 100 vol.% of fluorine gas that generates plasma by discharging. When plasma generated by discharging from a 100 vol.% in concentration of fluorine gas is used as a cleaning gas, a very excellent etching speed is available, plasma can be generated constantly even at a total gas flow rate of 1000 sccm and under a chamber pressure of 400 Pa, and a uniform cleaning can be ensured under the above conditions. The 100% concentration does not complicate the device to provide an excellent practical use. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013541187-A |
| priorityDate |
2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |