http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0223611-A3

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2001-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb31cc8fb92946bfd4dc0ec2bc387747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afe501edae5cb19ed01f02a761b6186
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publicationDate 2002-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-0223611-A3
titleOfInvention Integration of silicon etch and chamber cleaning processes
abstract A method for processing a substrate disposed in a substrate process chamber having a source power includes transferring the substrate into the substrate process chamber. A trench is etched on the substrate by exposing the substrate to a plasma formed from a first etchant gas by applying RF energy from the source power system and biasing the plasma toward the substrate. Byproducts adhering to inner surfaces of the substrate process chamber are removed by igniting a plasma formed from a second etchant gas including a halogen source in the substrate process chamber without applying bias power or applying minimal bias power. Thereafter, the substrate is removed from the chamber. At least 100 more substrates are processed with the etching-a-trench step and removing-etch-byproducts step before performing a dry clean or wet clean operation on the chamber.
priorityDate 2000-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9930359-A1
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Total number of triples: 23.