http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02097852-A3

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filingDate 2002-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-02097852-A3
titleOfInvention Plasma etching of silicon carbide
abstract A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including organic low-k materials. The etching gas includes a chlorine containing gas such as Cl2, an oxygen containing gas such as O2, and a carrier gas such as Ar. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrate.
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