| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_133d11e20ce85d3382c2deec195bbded
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_55fd9e7013144173837315f0002df009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ab86bc29d7c478c2527db9dca200b06d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10921b6521d55116c20837b860f32c5e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-168 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2001-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bb4b5cd34be5d642df42af2b5cdefd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a01309b6c45cb476acf6f3fdc776dc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_509a8915b3acb97f46a1706d6dd518bc |
| publicationDate |
2002-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-02063394-A1 |
| titleOfInvention |
Fabrication of structures of metal/semiconductor compound by x-ray/euv projection lithography |
| abstract |
A lithography method for fabricating structures of etch-resistant metal-semiconductor compound on a substrate with sub-micrometer scale resolutions is describes. Superposed layers of metal and semiconductor capable of reacting with each other to form etch-resistant metal/semiconductor compound are deposited on the substrate. Radiation from a X-ray/EUR source propagates through a patterned X-ray transparent/EUR reflective mask and is projected on the superposed metal and semiconductor layers. The X-ray transparent mask includes X-ray absorbing patterns imparted to the X-ray radiation while the EUV reflective mask includes EUV absorbing patterns also imparted to the EUV radiation. The energy of X-ray/EUV photons is absorbed locally by the metal and semiconductor layers. Absorption of this energy induces a reaction between the two layers responsible for the formation of etch-resistant metal/semiconductor compound with structures corresponding to the patterns imparted to the radiation by the X-ray/EUV mask. The metal layer is subsequently etches using selective plasma or wet etching, leaving the structures of etch-resistant metal/semiconductor compound intact. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7145243-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7064063-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004026524-A1 |
| priorityDate |
2001-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |