| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_260220c525b214105ee48ee2d77a5bf4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2000-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4484d87fc67be263a54fb8037dfd6f8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a2733c5194da85d0bccacee8ccbe87d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6117d17b4a68b5678702b17e81118e6 |
| publicationDate |
2000-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0075979-A1 |
| titleOfInvention |
Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices |
| abstract |
The invention relates to cured dielectric films and a process for their manufacture which are useful in the production of integrated circuits. Dual layered dielectric films are produced in which a lower layer comprises a non-silicon containing organic polymer and an upper layer comprises an organic, silicon containing polymer. Such films are useful in the manufacture of microelectronic devices such as integrated circuits (IC's). In one aspect the upper layer silicon containing polymer has less than 40 Mole percent carbon containing substituents, and in another aspect it has at least approximately 40 Mole percent carbon containing substituents. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7615783-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7268200-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7115531-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6815333-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8178159-B2 |
| priorityDate |
1999-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |