http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0049651-A9
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2000-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ad3400ef1d58f36767771f006d6b7ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a64be52af17d74df8809ff1fd82d6f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af58a4e48d9386bb9ec0c949a7ed1c7f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3631f6c4771a63bfbe3ae6c84670090 |
| publicationDate | 2002-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-0049651-A9 |
| titleOfInvention | Improved masking methods and etching sequences for patterning electrodes of high density ram capacitors |
| abstract | A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 νm and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150°C, and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HRBr, and SiCl4 mixtures thereof. A semiconductor device having a substrate and a plurality of noble metal electrodes supported by the substrate. The noble metal electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 νm and a platinum profile equal to or greater than about 85°. Masking methods and etching sequences for patterning high density RAM capacitors are also provided. The substrate may be heated by a pedestal in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1,000Å. |
| priorityDate | 1999-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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