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filingDate 2000-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56c36bdd2435082ce55f0214ec98b0da
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publicationDate 2000-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-0044047-A1
titleOfInvention Microelectronic structure
abstract A microelectronic structure comprising grooves (30) and contact openings (25) within a first layer (5) or a substrate (5). A metal nitride layer (45) covering at least partially the said first layer (5) or the substrate (5) comprising a material selected from the group consisting of TiN and WN. On top of that metal nitride layer (45) a tantalum layer (50) is deposited. Finally, a metal (75) is deposited to completely fill the grooves (30) and the contact openings (25).
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Total number of triples: 43.