http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0033372-A9
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec00dd5ecb31e1a216cede71d389cc7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_839b042b29250531758d2aed6ea3e2f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17bab465341819f3590e9a3cc0e901fa |
| publicationDate | 2000-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-0033372-A9 |
| titleOfInvention | Plasma etching of polysilicon using fluorinated gas mixtures |
| abstract | A method of etching polysilicon using a fluorinated gas chemistry to provide an etch rate in excess of 10,000 A/min and a photoresist selectivity of better than 3:1. The method is accomplished using a combination of a fluorinated gas and a fluorocarbon gas, e.g., 50-60 sccm of SF6, 1-40 sccm of CHF3, and 40-50 sccm of O2 with a total chamber pressure of 4-60 mTorr. The power applied to the etch chemistry to produce an etching plasma is 400-1500 watts of inductive source power (at 13.56 MHz) via an inductively coupled antenna and 200-1500 watts (at 12.56 MHz) of cathode bias power applied via a cathode electrode within a wafer support pedestal. The pedestal supporting the wafer was maintained at 0-50 degrees C. |
| priorityDate | 1998-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.