| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e071d18fea054bf8d1420d483e78ed1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_947532ec8b11e8cce33059b31b5ae429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a219e39822e80b9537ddd5654fff228 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
1999-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a9662e843284ba929d6dc7133f7f4cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e036f8dca6451ca931ed6e7b3d93062 |
| publicationDate |
2000-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0029637-A9 |
| titleOfInvention |
Diffusion barrier materials with improved step coverage |
| abstract |
A chemical vapor deposition process is provided for the formation of conformal layers containing metal nitrides. A film consisting mainly of titanium nitride is deposited from a vapor mixture of tetrakis(diethylamido)titanium, ammonia and trimethylamine on a surface heated to about 350 °C. The process can be used to form diffusion barrier layers between metals and silicon in computer microcircuits. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I664311-B |
| priorityDate |
1998-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |